A Theoretical and Experimental Comparison of 4H- and 6H-SiC MSM UV Photodetectors

Abstract:

Article Preview

This paper reports on fabrication and modeling of 4H- and 6H-SiC metal-semiconductor-metal (MSM) photodetectors (PDs). MSM PDs have been fabricated on 4H-SiC and 6H-SiC epitaxial layers, and their performance analyzed by MEDICI simulation and measurements. The simulations were also used to optimize the sensitivity by varying the width and spacing of the interdigitated electrodes. The fabricated PDs with 2 µm wide metal electrodes and 3 µm spacing between the electrodes exhibited, under UV illumination, a peak current to dark current ratio of 105 and 104 in 4H-SiC and 6H-SiC, respectively. The measured spectral responsivity of 6H-SiC PDs was higher compared to that of 4H-SiC PDs, with a cutoff at 407 nm compared to 384 nm in 4H-SiC PDs. Also the peak responsivity occurred at a shorter wavelength in 6H material. A high rejection ratio between the photocurrent and dark current was found in both cases. These experimental results were in agreement with simulation.

Info:

Periodical:

Materials Science Forum (Volumes 717-720)

Edited by:

Robert P. Devaty, Michael Dudley, T. Paul Chow and Philip G. Neudeck

Pages:

1207-1210

Citation:

J. K. Lim et al., "A Theoretical and Experimental Comparison of 4H- and 6H-SiC MSM UV Photodetectors", Materials Science Forum, Vols. 717-720, pp. 1207-1210, 2012

Online since:

May 2012

Export:

Price:

$38.00

[1] Alexy Vert et al., Phys. Status Solidi A 206 (2009), 2468.

[2] A. Scituto et al., Appl. Phys. Lett. 89, (2006), 081111.

[3] A. Scituto et al., Superlattices and Microstructures 41 (2007), 29.

[4] Chen Bin et al., J. Semicond. 31 (2010), 064010.

[5] M. Bakowski et al., Mater. Sci. Forum, 645-648 (2009), 1089.

[6] Ho-Young CHA et al., Japanese Journal of Applied Physics 47 (2008), p.5423.

Fetching data from Crossref.
This may take some time to load.