Fundamental Study of Sublimation-Recrystallization Phenomena in PVT-Growth of SiC Single Crystals
Sublimation-recrystallization processes occurring during PVT are investigated from the viewpoint of quasi-equilibrium phase transitions of SiC. In addition to the elemental reaction processes of PVT, other phenomena such as silicon droplet formation and in-situ etching are also discussed based upon the Si-C binary phase diagram, and possible mechanisms are proposed.
Robert P. Devaty, Michael Dudley, T. Paul Chow and Philip G. Neudeck
T. Fujimoto et al., "Fundamental Study of Sublimation-Recrystallization Phenomena in PVT-Growth of SiC Single Crystals", Materials Science Forum, Vols. 717-720, pp. 21-24, 2012