Fundamental Study of Sublimation-Recrystallization Phenomena in PVT-Growth of SiC Single Crystals

Abstract:

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Sublimation-recrystallization processes occurring during PVT are investigated from the viewpoint of quasi-equilibrium phase transitions of SiC. In addition to the elemental reaction processes of PVT, other phenomena such as silicon droplet formation and in-situ etching are also discussed based upon the Si-C binary phase diagram, and possible mechanisms are proposed.

Info:

Periodical:

Materials Science Forum (Volumes 717-720)

Edited by:

Robert P. Devaty, Michael Dudley, T. Paul Chow and Philip G. Neudeck

Pages:

21-24

Citation:

T. Fujimoto et al., "Fundamental Study of Sublimation-Recrystallization Phenomena in PVT-Growth of SiC Single Crystals", Materials Science Forum, Vols. 717-720, pp. 21-24, 2012

Online since:

May 2012

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$38.00

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