Paper Title:
Photoluminescence and Raman Spectroscopy Characterization of Boron- and Nitrogen-Doped 6H Silicon Carbide
  Abstract

Nitrogen-boron doped 6H-SiC epilayers grown on low off-axis 6H-SiC substrates have been characterized by photoluminescence and Raman spectroscopy. The photoluminescence results show that a doping larger than 1018 cm-3 is favorable to observe the luminescence and addition of nitrogen is resulting in an increased luminescence. A dopant concentration difference larger than 4x1018 cm-3 is proposed to achieve intense photoluminescence. Raman spectroscopy further confirmed the doping type and concentrations for the samples. The results indicate that N-B doped SiC is being a good wavelength converter in white LEDs applications.

  Info
Periodical
Materials Science Forum (Volumes 717-720)
Chapter
Chapter 3: Physical Properties and Characterization of SiC
Edited by
Robert P. Devaty, Michael Dudley, T. Paul Chow and Philip G. Neudeck
Pages
233-236
DOI
10.4028/www.scientific.net/MSF.717-720.233
Citation
Y. Y. Ou, V. Jokubavicius, C. Liu, R. W. Berg, M. K. Linnarsson, S. Kamiyama, Z. Y. Lu, R. Yakimova, M. Syväjärvi, H. Y. Ou, "Photoluminescence and Raman Spectroscopy Characterization of Boron- and Nitrogen-Doped 6H Silicon Carbide", Materials Science Forum, Vols. 717-720, pp. 233-236, 2012
Online since
May 2012
Export
Price
$35.00
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Authors: Satoshi Murata, Yoshihiro Nakamura, Tomohiko Maeda, Yoko Shibata, Mina Ikuta, Masaaki Sugiura, Shugo Nitta, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Masahiro Yoshimoto, Tomoaki Furusho, Hiroyuki Kinoshita
Abstract:The dependence of donor-acceptor pair (DAP) emission properties on impurity concentrations of N and B in 6H-SiC epilayers was investigated....
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