Comparison of Post-Growth Carrier Lifetime Improvement Methods for 4H-SiC Epilayers

Abstract:

Article Preview

We compare two methods for post-growth improvement of bulk carrier lifetime in 4H-SiC: dry oxidations and implantations with either 12C or 14N, followed by high temperature anneals in Ar atmosphere. Application of these techniques to samples cut from the same wafer/epilayer yields 2- to 11-fold lifetime increases, with the implantation/annealing technique shown to give greater maximum lifetimes. The maximum lifetimes reached are ~5μs after 12C implantation at 600°C and annealing in Ar for 180 minutes at 1500°C. Higher temperatures give decreased lifetimes, a result which differs from reports in literature.

Info:

Periodical:

Materials Science Forum (Volumes 717-720)

Edited by:

Robert P. Devaty, Michael Dudley, T. Paul Chow and Philip G. Neudeck

Pages:

285-288

Citation:

I.D. Booker et al., "Comparison of Post-Growth Carrier Lifetime Improvement Methods for 4H-SiC Epilayers", Materials Science Forum, Vols. 717-720, pp. 285-288, 2012

Online since:

May 2012

Export:

Price:

$41.00

[1] T. Kimoto, K. Danno and J. Suda, Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation, phys. stat. sol. (b) 245 (2008), pp.1327-1336.

DOI: https://doi.org/10.1002/pssb.200844076

[2] T. Hiyoshi and T. Kimoto, Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation, Appl. Phys. Express 2 (2009), pp.041101-3.

DOI: https://doi.org/10.1143/apex.2.041101

[3] T. Hayashi, K. Asano, J. Suda and T. Kimoto, Temperature and injection level dependencies and impact of thermal oxidation on carrier lifetimes in p-type and n-type 4H-SiC epilayers, J. Appl. Phys. 109 (2011), pp.014505-5.

DOI: https://doi.org/10.1063/1.3524266

[4] L. Storasta, H. Tsuchida, T. Miyazawa and T. Ohshima, Enhanced annealing of the Z1/2 defect in 4H-SiC epilayers, J. Appl. Phys. 103 (2008), pp.013705-7.

DOI: https://doi.org/10.1063/1.2829776

[5] P. B. Klein, Carrier lifetime measurements in n- 4H-SiC epilayers, J. Appl. Phys. 103 (2008), pp.033702-14.

[6] T. Dalibor, G. Pensl, H. Matsunami, T. Kimoto, W. J. Choyke, A. Schöner and N. Nordell, Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy, phys. stat. sol. (a) 162 (1997), pp.199-225.

DOI: https://doi.org/10.1002/1521-396x(199707)162:1<199::aid-pssa199>3.0.co;2-0

[7] T. Kimoto, T. Hiyoshi, T. Hayashi and J. Suda, Impacts of recombination at the surface and in the substrate on carrier lifetimes of n-type 4H-SiC epilayers, J. Appl. Phys. 108 (2010), pp.083721-7.

DOI: https://doi.org/10.1063/1.3498818