Radial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer Rotation

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In this report we present homoepitaxial growth of 4H-SiC on the Si-face of nominally on-axis substrates with diameter up to 100 mm in a hot-wall chemical vapor deposition reactor. A comparatively low carrier lifetime has been observed in these layers. Also, local variations in carrier lifetime are different from standard off-cut epilayers. The properties of layers were studied with more focus on charge carrier lifetime and its correlation with starting growth conditions, in-homogeneous surface morphology and different growth mechanisms.

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Periodical:

Materials Science Forum (Volumes 717-720)

Edited by:

Robert P. Devaty, Michael Dudley, T. Paul Chow and Philip G. Neudeck

Pages:

289-292

DOI:

10.4028/www.scientific.net/MSF.717-720.289

Citation:

P. Bergman et al., "Radial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer Rotation", Materials Science Forum, Vols. 717-720, pp. 289-292, 2012

Online since:

May 2012

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$35.00

[1] P.B. Klein, Carrier lifetime measurement in n- 4H-SiC epilayers, J. Appl. Phys. 103 (2008) 033702.

[2] T. Hiyoshi and T. Kimoto, Reduction of deep levels and improvement of carrier lifetime in n-type 4H-SiC by thermal oxidation, Appl. Phys. Express 2 (2009) 041101.

DOI: 10.1143/apex.2.041101

[3] L. Storasta et al., Enhanced annealing of the Z1/2 defect in 4H-SiC epilayers, J. Appl. Phys. 103 (2008) 013705.

DOI: 10.1063/1.2829776

[4] E. Janzén, A. Henry, J.P. Bergman, A. Ellison, and B. Magnusson, Material characterization need for SiC-based devices, Materials Science in Semiconductor Processing, v 4, n 1-3 (2001) pp.181-186.

DOI: 10.1016/s1369-8001(00)00135-9

[5] J. Hassan and J.P. Bergman, Influence of structural defects on carrier lifetime in 4H-SiC epitaxial layers: Optical lifetime mapping, J. Appl. Phys. 105 (2009) 123513.

DOI: 10.1063/1.3147903

[6] I. Booker, J. Hassan, and J.P. Bergman, High-Resolution Time-Resolved Carrier Lifetime and Photoluminescence Mapping of 4H-SiC Epilayers, these Proceedings.

DOI: 10.4028/www.scientific.net/msf.717-720.293

[7] B. Thomas, C. Hecht and B. Kallinger, Large Area Homoepitaxial Growth of Low Doped Thick Epilayers for Power Devices with VBR > 4 kV, Mater. Sci. Forum 615-617 (2009) 77.

DOI: 10.4028/www.scientific.net/msf.615-617.77

[8] A.A. Burk et al., SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices, Mater. Sci. Forum 600-603 (2009), 77.

DOI: 10.4028/www.scientific.net/msf.600-603.77

[9] L.E. Carlsson, J. Hassan, I.D. Booker, J.P. Bergman, and E. Janzén. The effect of Growth Conditions on Carrier Lifetime in n-type 4H-SiC Epitaxial Layers, these Proceedings.

DOI: 10.4028/www.scientific.net/msf.717-720.161

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