Radial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer Rotation


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In this report we present homoepitaxial growth of 4H-SiC on the Si-face of nominally on-axis substrates with diameter up to 100 mm in a hot-wall chemical vapor deposition reactor. A comparatively low carrier lifetime has been observed in these layers. Also, local variations in carrier lifetime are different from standard off-cut epilayers. The properties of layers were studied with more focus on charge carrier lifetime and its correlation with starting growth conditions, in-homogeneous surface morphology and different growth mechanisms.



Materials Science Forum (Volumes 717-720)

Edited by:

Robert P. Devaty, Michael Dudley, T. Paul Chow and Philip G. Neudeck




P. Bergman et al., "Radial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer Rotation", Materials Science Forum, Vols. 717-720, pp. 289-292, 2012

Online since:

May 2012




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