Total Near Interface Trap Density Calculation of 4H-SiC/SiO2 Structures before and after Nitrogen Passivation


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We compare the effect of hydrogen, nitrogen, and phosphorous passivation on total near interface trap density and mobility of 4H(0001)-SiC/SiO2 structure. The results show that nitrogen and phosphorous passivation decrease total near interface trap density by pushing the energy levels of interface traps away from the conduction band. The density of states (DOS), including interface states (Dit), are calculated for several 4H(0001)-SiC/SiO2 structures using density functional theory (DFT).



Materials Science Forum (Volumes 717-720)

Edited by:

Robert P. Devaty, Michael Dudley, T. Paul Chow and Philip G. Neudeck




S. Salemi et al., "Total Near Interface Trap Density Calculation of 4H-SiC/SiO2 Structures before and after Nitrogen Passivation", Materials Science Forum, Vols. 717-720, pp. 457-460, 2012

Online since:

May 2012




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DOI: 10.1063/1.126167

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