High-Resolution TEM Observation of 4H-SiC (0001) Surface Planarized by Catalyst-Referred Etching

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A novel abrasive-free planarization method “called catalyst-referred etching (CARE)” has been invented. After the CARE process, a flat and well-ordered surface is obtained as observed by atomic force microscopy (AFM). To determine the atomic structure at the topmost surface, in this study, CARE-processed surfaces of a standard commercial 2-inch n-type 4H-SiC (0001) wafer cut 8o off-axis toward the [1-100] direction were observed by high-resolution transmission electron microscopy (HRTEM). The HRTEM images showed alternating wide and narrow terraces and a single-bilayer step height. The relationship between the width of the terraces and the 4H-SiC crystal structure has been clarified.

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Periodical:

Materials Science Forum (Volumes 717-720)

Edited by:

Robert P. Devaty, Michael Dudley, T. Paul Chow and Philip G. Neudeck

Pages:

873-876

Citation:

B. V. Pho et al., "High-Resolution TEM Observation of 4H-SiC (0001) Surface Planarized by Catalyst-Referred Etching", Materials Science Forum, Vols. 717-720, pp. 873-876, 2012

Online since:

May 2012

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$38.00

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