Structural Study of Small Angle Grain Boundaries in Multicrystalline Si


Article Preview

Small angle grain boundaries (SA-GBs) are known as the most electrically active defects in multicrystalline silicon. These SA-GBs are classified in “general” and “special” by the normal and strong electrical activity at 300K, respectively. In this study, the origins of these electrical activities of SA-GBs were elucidated by using electron beam induced current (EBIC) and transmission electron microscopy (TEM). It was found that both general and special SA-GBs were composed of edge-type and 60 deg / screw dislocations. The fraction of edge dislocation in special SA-GB was higher than that of general one, which suggests that strong electrical activity is mainly originated in edge dislocations.



Edited by:

Hiroshi Yamada-Kaneta and Akira Sakai




Y. Miyamura et al., "Structural Study of Small Angle Grain Boundaries in Multicrystalline Si", Materials Science Forum, Vol. 725, pp. 157-160, 2012

Online since:

July 2012




[1] J. Chen, T. Sekiguchi, Jpn. J. Appl. Phys. 46(2007), 6489 -6497.

[2] J. Chen, T. Sekiguchi, R. Xie, P. Ahmet, T. Chikyo, D. Yang, S. Ito, F. Yin, Scripta Materialia 52 (2005) 1211-1215.

[3] S. Nara, T. Sekiguchi, J. Chen, Eur. Phys. J. Appl. Phys. 27 (2004), 389-392.

[4] T. Sekiguchi, K. Sumino, J. Appl. Phys. 79(1996), 3253-3260.

[5] W. Lee, J. Chen, B. Chen, J. Chang, T. Sekiguchi, Appl. Phys. Lett. 94(2009), 112103.