Structural Study of Small Angle Grain Boundaries in Multicrystalline Si

Abstract:

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Small angle grain boundaries (SA-GBs) are known as the most electrically active defects in multicrystalline silicon. These SA-GBs are classified in “general” and “special” by the normal and strong electrical activity at 300K, respectively. In this study, the origins of these electrical activities of SA-GBs were elucidated by using electron beam induced current (EBIC) and transmission electron microscopy (TEM). It was found that both general and special SA-GBs were composed of edge-type and 60 deg / screw dislocations. The fraction of edge dislocation in special SA-GB was higher than that of general one, which suggests that strong electrical activity is mainly originated in edge dislocations.

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Periodical:

Edited by:

Hiroshi Yamada-Kaneta and Akira Sakai

Pages:

157-160

DOI:

10.4028/www.scientific.net/MSF.725.157

Citation:

Y. Miyamura et al., "Structural Study of Small Angle Grain Boundaries in Multicrystalline Si", Materials Science Forum, Vol. 725, pp. 157-160, 2012

Online since:

July 2012

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$35.00

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