Spectroscopic Investigation of Silicon Polymorphs Formed by Indentation

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Silicon polymorphs have been prepared by means of scratching or indentation of Si(100) surfaces. Different indenter types have been used in order to validate the independence of silicon polymorph formation from indenter geometry. The formation of silicon polymorphs could be verified by registering the loading-displacement curves. Related to the maximum loads applied, only the formation of the meta-stable silicon phases SI-III, Si-IV and Si-XII has been observed, what has been verified by Raman spectroscopy. Four different ways of the preparation of electron transparent samples are presented and compared. Finally, a first electron energy loss spectrum of certain silicon polymorphs is shown.

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Periodical:

Edited by:

Hiroshi Yamada-Kaneta and Akira Sakai

Pages:

199-202

DOI:

10.4028/www.scientific.net/MSF.725.199

Citation:

M. Schade et al., "Spectroscopic Investigation of Silicon Polymorphs Formed by Indentation", Materials Science Forum, Vol. 725, pp. 199-202, 2012

Online since:

July 2012

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$38.00

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