Defects-Recognition, Imaging and Physics in Semiconductors XIV
This volume documents the latest understanding of many topics of current interest in the science and technology of defects in semiconductors. The investigation of defects in semiconductors is a little different to that in other fields of materials science: in order to observe defects in semiconductors and elucidate their physical nature, a very wide range of tools and techniques has been introduced or created; thanks to the inventive ideas of the researchers. This work clearly reflects the lively state of defect investigation in semiconductors.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
Review from Ringgold Inc., ProtoView: Drawn from papers delivered at the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, held in Miyazaki Japan in September 2011, his collection of sixty-six articles on materials engineering examines a wide variety of topics relating to semiconductor research and manufacturing. The works are divided into sections covering general defects, nitride materials and devices, compounds, photo-voltaic materials and modules, impurity and nanostructure, and functional oxides and other materials. Individual papers include abstracts, notes tables and illustrations and a volume wide keyword index is provided. Contributors are academics and researchers from primarily Japanese institutions.