Study of the Behavior of Positronium Annihilation in Porous Silicon

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The annihilation behavior of positronium in N and P type porous silicon is investigated via positron annihilation lifetime (PAL) and positronium time-of-flight (Ps-TOF) measurements. The result shows the N type sample has smaller positronium annihilation fraction and more interconnected pores. The microstructure of Rapid Thermal Oxidation (RTO) treated N type porous silicon also studied using PAL spectroscopy, and the relationship between its photoluminescence properties and porous structure was discussed.

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Edited by:

Jozef Krištiak, Jan Kuriplach and Pradeep K. Pujari

Pages:

203-206

Citation:

B. Y. Wang et al., "Study of the Behavior of Positronium Annihilation in Porous Silicon", Materials Science Forum, Vol. 733, pp. 203-206, 2013

Online since:

November 2012

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$38.00

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