Study of the Behavior of Positronium Annihilation in Porous Silicon
The annihilation behavior of positronium in N and P type porous silicon is investigated via positron annihilation lifetime (PAL) and positronium time-of-flight (Ps-TOF) measurements. The result shows the N type sample has smaller positronium annihilation fraction and more interconnected pores. The microstructure of Rapid Thermal Oxidation (RTO) treated N type porous silicon also studied using PAL spectroscopy, and the relationship between its photoluminescence properties and porous structure was discussed.
Jozef Krištiak, Jan Kuriplach and Pradeep K. Pujari
B. Y. Wang et al., "Study of the Behavior of Positronium Annihilation in Porous Silicon", Materials Science Forum, Vol. 733, pp. 203-206, 2013