Positron Lifetime at Deep Donors of Radiation Origin in Proton - Irradiated FZ-Silicon Single Crystals

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The recovery of shallow donor states of the atoms of phosphorus in n-FZ-Si:P material irradiated at the room temperature with 15 MeV protons was studied in the course of isochronal annealing. This process was investigated by the positron annihilation lifetime (PAL) spectroscopy and by low-temperature electrical measurements. The positron traps of a vacancy type manifesting themselves as deep donors have been revealed. These defects begin to anneal at ~ 593 K– 613 K; roughly estimated activation energy of the process is Ea ≈ 0.59 eV under the first order of reaction. The results suggest the involvement, at least, of one vacancy and the impurity atom of phosphorus in the microstructure of the deep donor.

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Edited by:

Jozef Krištiak, Jan Kuriplach and Pradeep K. Pujari

Pages:

224-227

Citation:

N. Y. Arutynov et al., "Positron Lifetime at Deep Donors of Radiation Origin in Proton - Irradiated FZ-Silicon Single Crystals", Materials Science Forum, Vol. 733, pp. 224-227, 2013

Online since:

November 2012

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$38.00

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DOI: https://doi.org/10.1007/978-3-662-03893-2_3

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