Paper Title:
X-Ray Diffraction and Raman Spectroscopy Study of Strain in Graphene Films Grown on 6H-SiC(0001) Using Propane-Hydrogen-Argon CVD
  Abstract

We have grown graphene films on 6H-SiC(0001) using propane CVD and evidenced the strong impact of the hydrogen/argon mixture used as the carrier gas on the graphene/SiC interface and on the orientation of graphene layers. By studying a set of samples grown with different hydrogen/argon mixture using Raman spectroscopy and grazing incidence X-ray diffraction, we evidence the links between graphene/SiC interface and strain in graphene.

  Info
Periodical
Materials Science Forum (Volumes 740-742)
Chapter
Chapter 2: Graphen Growth and Characterization
Edited by
Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein
Pages
117-120
DOI
10.4028/www.scientific.net/MSF.740-742.117
Citation
A. Michon, L. Largeau, A. Tiberj, J. R. Huntzinger, O. Mauguin, S. Vézian, D. Lefebvre, F. Cheynis, F. Leroy, P. Müller, T. Chassagne, M. Zielinski, M. Portail, "X-Ray Diffraction and Raman Spectroscopy Study of Strain in Graphene Films Grown on 6H-SiC(0001) Using Propane-Hydrogen-Argon CVD", Materials Science Forum, Vols. 740-742, pp. 117-120, 2013
Online since
January 2013
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Price
$35.00
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