Silicon Nitride as Top Gate Dielectric for Epitaxial Graphene

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Silicon nitride (SiN) was deposited by plasma enhanced chemical vapor deposition (PECVD) as a top gate dielectric on epitaxial graphene on 6H-SiC(0001). We compare x-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and transport measurements which were performed before and after the SiN deposition. We demonstrate that closed layers of SiN are formed without the need for surface activation and that the plasma process leads only to a minor degradation of the graphene. The SiN layer induces strong n-type doping. For a limited gate voltage range, a small hysteresis of 0.2 V is observed in top-gated field effect devices.

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Periodical:

Materials Science Forum (Volumes 740-742)

Edited by:

Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein

Pages:

149-152

Citation:

P. Wehrfritz et al., "Silicon Nitride as Top Gate Dielectric for Epitaxial Graphene", Materials Science Forum, Vols. 740-742, pp. 149-152, 2013

Online since:

January 2013

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$38.00

[1] K. Emtsev et al., Nat. Mat. 8 (2009) 203-207.

[2] S. Kim et al., Appl. Phys. Lett. 94 (2009) 062107.

[3] B. Lee et al., Appl. Phys. Lett. 92 (2008) 203102.

[4] W. Zhu et al., Nano Lett. 10 (2010) 3572-3576.

[5] F. Giannazzo et al., Mat. Sci. Forum, 717-720 (2011) 637-640.

[6] M. Ostler et al., physica status solidi (b), 247 (2010) 2924-2926.

[7] C. Riedl et al., Phys. Rev. Lett. 103 (2009) 246804.

[8] F. Speck et al., Appl. Phys. Lett. 99 (2011) 122106.

[9] S. Pal et al., Appl. Surf. Sci. 181 (2001) 179-185.

[10] J. Röhrl et al., Appl. Phys. Lett. 92 (2008) 201918.

[11] F. Fromm et al., submitted to Physical Review B (2012).