Innovative 3C-SiC on SiC via Direct Wafer Bonding

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In this paper, we report on a novel direct wafer bonding technique; Si (111) wafers to polycrystalline silicon carbide carrier wafers. The purpose of this work is to provide a platform for 3C-SiC epitaxial growth above the wafer bonded Si (111) wafers. We have demonstrated reduced wafer bow, confirmed by optical microscopy together with a digital camera. 3C-SiC epitaxial layers have been grown by conventional chemical vapor deposition techniques above Si/SiC structures. All of these 3C-SiC epitaxial layers are highly crystalline in nature. In the future, the realization of thick, bow-free 3C-SiC layers suitable for power device fabrication is achievable.

Info:

Periodical:

Materials Science Forum (Volumes 740-742)

Edited by:

Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein

Pages:

271-274

Citation:

M. R. Jennings et al., "Innovative 3C-SiC on SiC via Direct Wafer Bonding", Materials Science Forum, Vols. 740-742, pp. 271-274, 2013

Online since:

January 2013

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$38.00

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