P-6H-SiC Conductivity Compensation after Irradiation of 8MeV Protons

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Carrier removal rate (Vd) in p-6H-SiC in its irradiation with 8 MeV protons has been studied. p-6H-SiC samples were produced by sublimation in a vacuum. Vd was determined by analysis of capacitance-voltage characteristics and from results of Hall effect measurements. It was found that full compensation of samples with initial value of Na-Nd 1.5 x1018 cm-3 occurs at an irradiation dose of ~1.1 1016 cm-2. In this case, the carrier removal rate was ~130 cm-1

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Periodical:

Materials Science Forum (Volumes 740-742)

Edited by:

Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein

Pages:

353-356

DOI:

10.4028/www.scientific.net/MSF.740-742.353

Citation:

A. A. Lebedev et al., "P-6H-SiC Conductivity Compensation after Irradiation of 8MeV Protons", Materials Science Forum, Vols. 740-742, pp. 353-356, 2013

Online since:

January 2013

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$38.00

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