Comparative Analysis of Defect Formation in Silicon Carbide under Electron and Proton Irradiation


Article Preview

The irradiation with 0.9 MeV electrons and with 8 MeV and 15 MeV protons were performed for studying radiation defects. Proton scattering in a silicon carbide film has been numerically simulated. Distribution histograms of the energy imparted to recoil atoms are obtained. Two energy ranges are considered when analyzing the histograms. In the first range of “low” energies, individual Frenkel pairs with closely spaced components are created. In the second range, recoil atoms have energies sufficient for generating a cascade of displacements. This gives rise to microscopic regions with high density of vacancies and vacancy complexes of various kinds.



Materials Science Forum (Volumes 740-742)

Edited by:

Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein






A. M. Ivanov et al., "Comparative Analysis of Defect Formation in Silicon Carbide under Electron and Proton Irradiation", Materials Science Forum, Vols. 740-742, pp. 369-372, 2013

Online since:

January 2013




[1] V. V. Emtsev, A. M. Ivanov, V. V. Kozlovskii, A. A. Lebedev, G. A. Oganesyan, and N. B. Strokan, Semiconductors 44 (2010) 678-684.

[2] A. M. Ivanov, N. B. Strokan, V. V. Kozlovskii, and A. A. Lebedev, Semiconductors 42 (2008) 363-369.

[3] L. Henry, M. -F. Barthe, C. Corbel, P. Desgardin, G. Blondiaux, S. Arpiainen and L. Liszkay, Phys. Rev. B 67 (2003) 115210.

In order to see related information, you need to Login.