A Study of Properties of the Nanocrystalline CdO Thin Film Prepared by Solid-Vapor Deposition Method


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A nanocrystalline CdO thin film was successfully synthesized on p-type silicon substrate with approximately 370 nm thickness by a vapor transport process (solid-vapor deposition) for Cd powder at 1274 K with argon and oxygen flows in a tube furnace. Scanning electronmicroscopy revealed that the product was a CdO nanocrystalline. X-raydiffraction and energy dispersive X-ray techniques were used to characterize structural properties. The grown nanocrystalline thin film had a grain size of 38 nm. Photoluminescence spectroscopy was conducted to investigate the optical properties of the nanocrystalline CdO thin film. A strong emission peak was observed at 511 nm (2.43 eV), which is ascribable to the near-band-edge emission of CdO with a full-width and half maximum of approximately 124 nm. The sheet resistance and the resistivity of the CdO thin film were measured using a four-point probe; RS = 16.2 Ω/sqand ρ = 5.82×10-4 Ω.cm.Carrier concentration and Hall mobility were obtained by Hall-effect measurement system; n = 1.53×1020 cm-3 and μH = 42.3cm2/Vs.



Edited by:

Akrajas Ali Umar, Muhamad Mat Salleh and Muhammad Yahaya




M. Zaien et al., "A Study of Properties of the Nanocrystalline CdO Thin Film Prepared by Solid-Vapor Deposition Method", Materials Science Forum, Vol. 756, pp. 54-58, 2013

Online since:

May 2013




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