Silicon Carbide Field Effect Transistors for Detection of Ultra-Low Concentrations of Hazardous Volatile Organic Compounds

Abstract:

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Gas sensitive silicon carbide field effect transistors with nanostructured Ir gate layers have been used for the first time for sensitive detection of volatile organic compounds (VOCs) at part per billion level for indoor air quality applications. Formaldehyde, naphthalene, and benzene have been used as typical VOCs in dry air and under 10% and 20% relative humidity. A single VOC was used at a time to study long-term stability, repeatability, temperature dependence, effect of relative humidity, sensitivity, response and recovery times of the sensors.

Info:

Periodical:

Materials Science Forum (Volumes 778-780)

Edited by:

Hajime Okumura, Hiroshi Harima, Tsunenobu Kimoto, Masahiro Yoshimoto, Heiji Watanabe, Tomoaki Hatayama, Hideharu Matsuura, Tsuyoshi Funaki and Yasuhisa Sano

Pages:

1067-1070

DOI:

10.4028/www.scientific.net/MSF.778-780.1067

Citation:

D. Puglisi et al., "Silicon Carbide Field Effect Transistors for Detection of Ultra-Low Concentrations of Hazardous Volatile Organic Compounds", Materials Science Forum, Vols. 778-780, pp. 1067-1070, 2014

Online since:

February 2014

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$35.00

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