Paper Title:
Silicon Carbide Field Effect Transistors for Detection of Ultra-Low Concentrations of Hazardous Volatile Organic Compounds
  Abstract

Gas sensitive silicon carbide field effect transistors with nanostructured Ir gate layers have been used for the first time for sensitive detection of volatile organic compounds (VOCs) at part per billion level for indoor air quality applications. Formaldehyde, naphthalene, and benzene have been used as typical VOCs in dry air and under 10% and 20% relative humidity. A single VOC was used at a time to study long-term stability, repeatability, temperature dependence, effect of relative humidity, sensitivity, response and recovery times of the sensors.

  Info
Periodical
Materials Science Forum (Volumes 778-780)
Chapter
Chapter 5: Devices and Circuits
Edited by
Hajime Okumura, Hiroshi Harima, Tsunenobu Kimoto, Masahiro Yoshimoto, Heiji Watanabe, Tomoaki Hatayama, Hideharu Matsuura, Tsuyoshi Funaki and Yasuhisa Sano
Pages
1067-1070
DOI
10.4028/www.scientific.net/MSF.778-780.1067
Citation
D. Puglisi, J. Eriksson, C. Bur, A. Schütze, A. Lloyd Spetz, M. Andersson, "Silicon Carbide Field Effect Transistors for Detection of Ultra-Low Concentrations of Hazardous Volatile Organic Compounds", Materials Science Forum, Vols. 778-780, pp. 1067-1070, 2014
Online since
February 2014
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Price
$35.00
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