Characterization of Ge-Doped Homoepitaxial Layers Grown by Chemical Vapor Deposition

Abstract:

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We have investigated the electrical properties of n-type 4H-SiC in-situ germanium-doped homoepitaxial layers grown by chemical vapor deposition. Germanium is an isoelectronic impurity and, therefore, not expected to contribute to the conductivity. However, Hall effect measurements taken on samples with and without germanium revealed an enhanced mobility by a factor of ≈2 at T ≈ 55 K in the germanium-doped sample despite equal free electron concentration and equal compensation. Deep level transient spectroscopy (DLTS) measurements taken on germanium-doped samples reveal negative peaks indicating the presence of charged extended defects.

Info:

Periodical:

Materials Science Forum (Volumes 778-780)

Edited by:

Hajime Okumura, Hiroshi Harima, Tsunenobu Kimoto, Masahiro Yoshimoto, Heiji Watanabe, Tomoaki Hatayama, Hideharu Matsuura, Tsuyoshi Funaki and Yasuhisa Sano

Pages:

261-264

DOI:

10.4028/www.scientific.net/MSF.778-780.261

Citation:

T. Sledziewski et al., "Characterization of Ge-Doped Homoepitaxial Layers Grown by Chemical Vapor Deposition", Materials Science Forum, Vols. 778-780, pp. 261-264, 2014

Online since:

February 2014

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$35.00

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