Persistent Conductivity in n-Type 3C-SiC Observed at Low Temperatures

Abstract:

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Persistent conductivity in n-type 3C-SiC is investigated in a wide temperature range down to 3 K by Hall effect, admittance spectroscopy, low temperature photoluminescence (LTPL) and Raman spectroscopy. We propose a model, which clearly explains the persistent behavior of the electron density n below 50 K. It is experimentally verified that the persistent conductivity results from doped SF bunches, which can be considered as nanopolytype inclusions in 3C-SiC.

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Periodical:

Materials Science Forum (Volumes 778-780)

Edited by:

Hajime Okumura, Hiroshi Harima, Prof. Tsunenobu Kimoto, Masahiro Yoshimoto, Heiji Watanabe, Tomoaki Hatayama, Hideharu Matsuura, Tsuyoshi Funaki and Yasuhisa Sano

Pages:

265-268

Citation:

S. Beljakowa et al., "Persistent Conductivity in n-Type 3C-SiC Observed at Low Temperatures", Materials Science Forum, Vols. 778-780, pp. 265-268, 2014

Online since:

February 2014

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$38.00

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DOI: https://doi.org/10.1002/pssb.200844052