HeteroSiC & WASMPE 2013
Collection of selected, peer reviewed papers from the 2013 HeteroSiC-WASMPE, June 17-19, 2013, Nice, France.
The 25 papers are grouped as follows:
Chapter 1: 3C-SiC – Epitaxy, Characterization and Devices;
Chapter 2: 4H-SiC and 15R-SiC – Growth and Characterization;
Chapter 3: Related Materials – Gallium Nitride, Graphene and Silicon;
Chapter 4: SiC Devices and Device Processing
15R-SiC – Growth, 3C-SiC – Epitaxy, 4H-SiC, Characterization, Device Processing, Devices, Graphene, Related Materials – Gallium Nitride, SiC Devices, Silicon
Review from Ringgold Inc., ProtoView: As in previous years, The International Workshop on Silicon Carbide Hetero-Epitaxy (HeteroSiC) and the Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (WASMPE) were held jointly. The 25 papers that emerged cover 3C-SiC—epitaxy, characterization, and devices; 4H-SiC and 15R-SiC—growth and characterization; related materials—gallium nitride, graphene, and silicon; and SiC devices and device processing. Among specific topics are strain evaluation and fracture properties of hetero-epitaxial single crystal 3C-SiC squared membrane, anti-reflective porous silicon features by substrate conformal imprint lithography for silicon photovoltaic applications, and the impact of oxygen flow rate on the oxide thickness and interface trap density in 4H-SiC MOS capacitors.
— Materials science