Characterization of Comet-Shaped Defects on C-Face 4H-SiC Epitaxial Wafers

Abstract:

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The crystallographic structure of comet-shaped defects observed on C-face 4H-SiC epitaxial film was investigated. The comet-shaped defects consist of head and tail part. The tail part shows symmetrical shape with respect to the (1-100) plane in cross section and narrowing along the step-flow direction. The tail part consists of four 3C domains with characteristic twin boundaries of Σ3 and Σ27. The head part consists of 3C poly-crystalline grains formed during epitaxial film growth and its formation is triggered by 3C-SiC particle contamination.

Info:

Periodical:

Materials Science Forum (Volumes 821-823)

Edited by:

Didier Chaussende and Gabriel Ferro

Pages:

173-176

Citation:

T. Yamashita et al., "Characterization of Comet-Shaped Defects on C-Face 4H-SiC Epitaxial Wafers", Materials Science Forum, Vols. 821-823, pp. 173-176, 2015

Online since:

June 2015

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