Characterization of Comet-Shaped Defects on C-Face 4H-SiC Epitaxial Wafers
The crystallographic structure of comet-shaped defects observed on C-face 4H-SiC epitaxial film was investigated. The comet-shaped defects consist of head and tail part. The tail part shows symmetrical shape with respect to the (1-100) plane in cross section and narrowing along the step-flow direction. The tail part consists of four 3C domains with characteristic twin boundaries of Σ3 and Σ27. The head part consists of 3C poly-crystalline grains formed during epitaxial film growth and its formation is triggered by 3C-SiC particle contamination.
Didier Chaussende and Gabriel Ferro
T. Yamashita et al., "Characterization of Comet-Shaped Defects on C-Face 4H-SiC Epitaxial Wafers", Materials Science Forum, Vols. 821-823, pp. 173-176, 2015