Reduction of Implantation-Induced Point Defects by Germanium Ions in n-Type 4H-SiC
We have investigated the electrical properties of germanium-implanted n-type 4H-SiC epitaxial layers. Deep level transient spectroscopy (DLTS) was employed in order to study the influence of germanium ions on implantation-induced point defects. In particular, we observe a decrease of the concentration of Z1/2 defect with increasing dose of implanted germanium.
Didier Chaussende and Gabriel Ferro
T. Sledziewski et al., "Reduction of Implantation-Induced Point Defects by Germanium Ions in n-Type 4H-SiC", Materials Science Forum, Vols. 821-823, pp. 347-350, 2015