Reduction of Implantation-Induced Point Defects by Germanium Ions in n-Type 4H-SiC

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We have investigated the electrical properties of germanium-implanted n-type 4H-SiC epitaxial layers. Deep level transient spectroscopy (DLTS) was employed in order to study the influence of germanium ions on implantation-induced point defects. In particular, we observe a decrease of the concentration of Z1/2 defect with increasing dose of implanted germanium.

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Periodical:

Materials Science Forum (Volumes 821-823)

Edited by:

Didier Chaussende and Gabriel Ferro

Pages:

347-350

Citation:

T. Sledziewski et al., "Reduction of Implantation-Induced Point Defects by Germanium Ions in n-Type 4H-SiC", Materials Science Forum, Vols. 821-823, pp. 347-350, 2015

Online since:

June 2015

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