Sputtered Ohmic Cobalt Silicide Contacts to 4H-SiC


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Ohmic CoSi2 contacts to n-type 4H-SiC showing low contact resistance have been made by sputter depositing sequential layers of Si and Co on 4H-SiC substrates followed by a two-step rapid thermal anneal at 600 °C and 950 °C. The contacts formed have been characterized at temperatures ranging from-40 °C to 500 °C with a specific contact resistance of 3.80∙10-5 Ωcm2 at 25 °C and a minimum of 6.0∙10-6 Ωcm2 at 500 °C.



Materials Science Forum (Volumes 821-823)

Edited by:

Didier Chaussende and Gabriel Ferro




K. Smedfors et al., "Sputtered Ohmic Cobalt Silicide Contacts to 4H-SiC", Materials Science Forum, Vols. 821-823, pp. 440-443, 2015

Online since:

June 2015




* - Corresponding Author

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