Impact of Stacking Fault on the I-V Characteristics of 4H-SiC Schottky Barrier Diode


Article Preview

The influence of stacking faults (SFs) and triangular defects (TDs) on the electrical properties of 4H-SiC Schottky barrier diode (SBD) were investigated. The SF types and locations were distinguished and mapped by using room-temperature photoluminescence (PL) and optical microscope. SBDs were fabricated including the location of SF’s and TD’s. The effects of the types of defects and its area portion in the fabricated SBDs were also investigated. Based on the present data, 3C-TD has more harmful effect rather than the other SFs. The fabricated SBDs including SFs showed that increase of area portion of SF’s also resulted increase of specific on resistance of SBDs.



Materials Science Forum (Volumes 821-823)

Edited by:

Didier Chaussende and Gabriel Ferro




H. J. Jung et al., "Impact of Stacking Fault on the I-V Characteristics of 4H-SiC Schottky Barrier Diode", Materials Science Forum, Vols. 821-823, pp. 563-566, 2015

Online since:

June 2015




* - Corresponding Author

[1] R. A. Berechman, M. Skowronski, Q. Zhang, J. Appl. Phys. 105 (2009) 74513.

[2] K. Konishi, S. Nakata, T. Nakaki, Y. Nakao, A. Nagae, T. Tanaka, Y. Nakamura, Y. Toyoda, H. Sumitani, T. Oomori, Jpn. J. Appl. Phys. 52 (2013) 04CP05.


[3] H. Fujiwara, T. Kimoto, T. Tojo, H. Matsunami, Appl. Phys. Lett. 87 (2005) 051912.

[4] A. Galeckas, J. Linnros, P. Pirouz, Appl. Phys. Lett. 81 (2002) 883.

[5] I. Kamata, X. Zhang, H. Tsuchida, Mater. Sci. Forum 725 (2012) 15.

[6] Y. J. Shin, S. I. Kim, H. J. Jung, C. W. Lee, W. Bahng, Mater. Sci. Forum 778-780 (2014) 394.