Impact of Nitric Oxide Post Oxidation Anneal on the Bias Temperature Instability and the On-Resistance of 4H-SiC nMOSFETs


Article Preview

We study the impact of different nitric oxide (NO) post oxidation annealing (POA) procedures on the on resistance Ron of n-channel MOSFETs and on the threshold voltage shift ∆Vth following positive bias temperature stress (PBTS). All samples were annealed in an NO containing atmosphere at various temperatures and times. A positive stress voltage of 30 V was chosen which corresponds to an electric field of about 4.3 MV/cm. The NO POA causes a decrease in overall ∆Vth for longer NO POA times and higher NO POA temperatures. As opposed to the change in ∆Vth, the device Ron increases with NO POA temperature and time.



Materials Science Forum (Volumes 821-823)

Edited by:

Didier Chaussende and Gabriel Ferro






G. Rescher et al., "Impact of Nitric Oxide Post Oxidation Anneal on the Bias Temperature Instability and the On-Resistance of 4H-SiC nMOSFETs", Materials Science Forum, Vols. 821-823, pp. 709-712, 2015

Online since:

June 2015




* - Corresponding Author

[1] Jamet, P., and Sima Dimitrijev. Physical properties of N2O and NO-nitrided gate oxides grown on 4H-SiC., Applied Physics Letters 79. 3 (2001): 323-325.

DOI: 10.1063/1.1385181

[2] Grasser, T., et al. Advanced characterization of oxide traps: The dynamic time-dependent defect spectroscopy., IEEE International Reliability Physics Symposium (2013).

DOI: 10.1109/irps.2013.6531957

[3] Rozen, John, et al. Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC., Journal of Applied Physics 105. 12 (2009): 124506.

DOI: 10.1063/1.3131845

[4] Dhar, S., et al. Interface trap passivation for SiO2/(000-1) C-terminated 4H-SiC., Journal of Applied Physics 98. 1 (2005): 014902-014902.

DOI: 10.1063/1.1938270

[5] Chung, Gilyong, et al. Effects of anneals in ammonia on the interface trap density near the band edges in 4H–silicon carbide metal-oxide-semiconductor capacitors., Applied Physics Letters 77. 22 (2000): 3601-3603.

DOI: 10.1063/1.1328370

[6] Yoshioka, H., Nakamura, T., & Kimoto, T. Generation of very fast states by nitridation of the SiO2/SiC interface. Journal of Applied Physics, 112(2), (2012) 024520.

DOI: 10.1063/1.4740068

[7] Soejima, Narumasa, et al. Effect of NH3 post-oxidation annealing on flatness of SiO2/SiC interface., Mater. Sci. Forum. Vol. 740. (2013).

DOI: 10.4028/

In order to see related information, you need to Login.