ECL-Based SiC Logic Circuits for Extreme Temperatures


Article Preview

Integrated digital circuits, fabricated in a bipolar SiC technology, have been successfully tested up to 600 °C. Operated with-15 V supply voltage from 27 up to 600 °C OR-NOR gates exhibit stable noise margins of about 1 or 1.5 V depending on the gate design, and increasing delay-power consumption product in the range 100 - 200 nJ. In the same temperature range an oscillation frequency of about 1 MHz is also reported for an 11-stage ring oscillator.



Materials Science Forum (Volumes 821-823)

Edited by:

Didier Chaussende and Gabriel Ferro




L. Lanni et al., "ECL-Based SiC Logic Circuits for Extreme Temperatures", Materials Science Forum, Vols. 821-823, pp. 910-913, 2015

Online since:

June 2015




* - Corresponding Author

[1] C. -W. Soong, A.C. Patil, S.L. Garverick, F. Xiaoan, M. Mehregany, 550 °C Integrated Logic Circuits using 6H-SiC JFETs, Electron Device Letters, IEEE, vol. 33, 10 (2012) pp.1369-1371.


[2] AC. Patil, F. Xiao-An, M. Mehregany, S.L. Garverick, Fully-monolithic, 600°C differential amplifiers in 6H-SiC JFET IC technology, " CICC , 09. IEEE, (2009) pp.73-76.


[3] L. Lanni, B. G. Malm, M. Östling, C. -M. Zetterling, 500 °C bipolar integrated OR/NOR gate in 4H-SiC, IEEE Electron Device Letters, vol. 34, 9 (2013) pp.1091-1093.


[4] R. Hedayati, L. Lanni, S. Rodriguez, B.G. Malm, A. Rusu, C. -M. Zetterling, A Monolithic, 500 °C Operational Amplifier in 4H-SiC Bipolar Technology, IEEE Electron Device Letters, vol. 35, 7 (2014) pp.693-695.


[5] S. Tanimoto, T. Suzuki, A. Hanamura, M. Hoshi, T. Shinohara, K. Arai, Critical Reliability Issues for SiC Power MOSFETs Operated at High Temperature, Mater. Sci. Forum, vol. 556-557 (2007) p.779.


[6] J. O. Olowolafe, C. J. Palmstrom. E.G. Colgan, J.W. Mayer, Al/TiW reaction kinetics: Influence of Cu and interface oxides, J. Appl. Phys., 58 (1985) pp.3440-3443.


[7] S. Balachandran, T. P. Chow, A. Agarwal: Low and High Temperature Performance of 600V 4H-SiC Epitaxial Emitter BJTs, Mater. Sci. Forum, vol. 483-485 (2005) pp.909-912.