RHEED Study of Epitaxial Graphene on Conductive and Semi-Insulating 6H-SiC (0001) Substrates


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The technique of reflection high-energy electron diffraction (RHEED) has been applied to study the graphene growth on conductive and semi-insulating 6H-SiC (0001) substrates using two RHEED devices. It was found the oriented growth of graphene on the conductive wafer and both oriented as disordered graphene growth on semi-insulating wafer due to the partial formation of polycrystalline component in nanocarbon film. It was shown that the appearance of the graphene polycrystalline phase was caused by the lower perfection structure of the surface of the semi-insulating substrate as compared to the conductive substrate.



Materials Science Forum (Volumes 821-823)

Edited by:

Didier Chaussende and Gabriel Ferro






I. S. Kotousova et al., "RHEED Study of Epitaxial Graphene on Conductive and Semi-Insulating 6H-SiC (0001) Substrates", Materials Science Forum, Vols. 821-823, pp. 945-948, 2015

Online since:

June 2015





[1] X.N. Xie et al, Surface Science, 478, 57-71 (2001).

[2] A.A. Lebedev et al, Physics of the Solid State, 51, 4, 829 (2009).

[3] D.W. Pashley, Advances Phys., 5, 18, 173 (1956).

[4] I. Forbauex et al, Phys. Rev. B, 58, 24, 16396 (1998).

[5] K. V Emtsev et al, Phys. Rev. B, 77 155303 (2008).

[6] Y. Hisada et al, Jpn. J. Appl. Phys, 40, 2211 (2001).

[7] P. Martenson et al, Phys. Stat. Sol. (b), 202, 501 (1997).

[8] Yu.G. Galitsin et al, Semiconductors, 32, 1, 78 (1998).

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