Silicon Carbide and Related Materials 2015

Volume 858

doi: 10.4028/

Paper Title Page

Authors: Adrian R. Powell, Joseph J. Sumakeris, Yuri Khlebnikov, Michael J. Paisley, R.T. Leonard, Eugene Deyneka, Sumit Gangwal, Jyothi Ambati, V. Tsevtkov, Jeff Seaman, Andy McClure, Chris Horton, Olek Kramarenko, Varad Sakhalkar, M. O’Loughlin, Albert A. Burk, J.Q. Guo, Michael Dudley, Elif Balkas

Abstract: The growth of large diameter silicon carbide (SiC) crystals produced by the physical vapor transport (PVT) method is outlined. Methods to...

Authors: Ian Manning, Jie Zhang, Bernd Thomas, Edward Sanchez, Darren Hansen, Daniel Adams, Gil Chung, Kevin Moeggenborg, Christopher Parfeniuk, Jeffrey Quast, Victor Torres, Clinton Whiteley

Abstract: Efforts to develop 150 mm 4H SiC bare wafer and epitaxial substrates for power electronic device applications have resulted in quality...

Authors: Jianqiu Guo, Yu Yang, Fang Zhen Wu, Joseph J. Sumakeris, R.T. Leonard, O.Y. Goue, Balaji Raghothamachar, Michael Dudley

Abstract: The presence of threading mixed dislocations (TMDs) (with both edge and screw component) in 4H-SiC crystals grown by PVT method has been...

Authors: Katsunori Danno, Satoshi Yamaguchi, Hiroyuki Kimoto, Kazuaki Sato, Takeshi Bessho

Abstract: Solution growth of high-quality 4H-SiC bulk crystals has been performed by using Si-Cr based melt at 2000°C. Through enlargement of crystal...

Authors: Jun Kojima, Yuichiro Tokuda, Emi Makino, Naohiro Sugiyama, Norihiro Hoshino, Isaho Kamata, Hidekazu Tsuchida

Abstract: In order to diffuse the use of SiC, mass-production technologies of SiC wafers are needed. It is easy to be understood that high-speed and...

Authors: Norihiro Hoshino, Isaho Kamata, Yuichiro Tokuda, Emi Makino, Naohiro Sugiyama, Jun Kojima, Hidekazu Tsuchida

Abstract: Limitations in the very fast growth of 4H-SiC crystals are surveyed for a high-temperature gas source method. The evolution of macro-step...

Authors: Lars Fahlbusch, Michael Schöler, Patrick Mattle, Sarah Schnitzer, Hossein Khodamoradi, Naoya Iwamoto, Bengt Gunnar Svensson, P.J. Wellmann

Abstract: We developed a solution growth process related to the combination of the Vertical Bridgman and Vertical Gradient Freeze in a metal free Si-C...

Authors: Didier Chaussende, Lucile Parent-Bert, Yun Ji Shin, Thierry Ouisse, Takeshi Yoshikawa

Abstract: Using a sessile drop method, investigation of the surface reconstruction of a Si-face, 4°off (0001) 4H-SiC surface in contact with pure...

Authors: Yu Qiang Gao, Hong Yan Zhang, Yan Min Zong, Huan Huan Wang, Jianqiu Guo, Balaji Raghothamachar, Michael Dudley, Xi Jie Wang

Abstract: 150 mm diameter 4H-SiC boules were grown by the physical vapor transport (PVT) method. Synchrotron white beam X-ray topography (SWBXT) was...


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