Ni2Si/4H-SiC Schottky Photodiodes for Ultraviolet Light Detection
Ultraviolet (UV) monitoring is of great interest in the healthcare field to prevent excessive UV exposure risks. In the last years silicon carbide (SiC) has emerged as a suitable material for the fabrication of UV detectors. In this paper we propose a 4H-SiC Schottky photodiode with a continuous very thin Ni2Si layer operating at 0V, properly designed for UV radiation monitoring.
Fabrizio Roccaforte, Francesco La Via, Roberta Nipoti, Danilo Crippa, Filippo Giannazzo and Mario Saggio
M. Mazzillo et al., "Ni2Si/4H-SiC Schottky Photodiodes for Ultraviolet Light Detection", Materials Science Forum, Vol. 858, pp. 1015-1018, 2016