Ni2Si/4H-SiC Schottky Photodiodes for Ultraviolet Light Detection


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Ultraviolet (UV) monitoring is of great interest in the healthcare field to prevent excessive UV exposure risks. In the last years silicon carbide (SiC) has emerged as a suitable material for the fabrication of UV detectors. In this paper we propose a 4H-SiC Schottky photodiode with a continuous very thin Ni2Si layer operating at 0V, properly designed for UV radiation monitoring.



Edited by:

Fabrizio Roccaforte, Francesco La Via, Roberta Nipoti, Danilo Crippa, Filippo Giannazzo and Mario Saggio




M. Mazzillo et al., "Ni2Si/4H-SiC Schottky Photodiodes for Ultraviolet Light Detection", Materials Science Forum, Vol. 858, pp. 1015-1018, 2016

Online since:

May 2016




* - Corresponding Author

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