Ni2Si/4H-SiC Schottky Photodiodes for Ultraviolet Light Detection

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Ultraviolet (UV) monitoring is of great interest in the healthcare field to prevent excessive UV exposure risks. In the last years silicon carbide (SiC) has emerged as a suitable material for the fabrication of UV detectors. In this paper we propose a 4H-SiC Schottky photodiode with a continuous very thin Ni2Si layer operating at 0V, properly designed for UV radiation monitoring.

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Edited by:

Fabrizio Roccaforte, Francesco La Via, Roberta Nipoti, Danilo Crippa, Filippo Giannazzo and Mario Saggio

Pages:

1015-1018

Citation:

M. Mazzillo et al., "Ni2Si/4H-SiC Schottky Photodiodes for Ultraviolet Light Detection", Materials Science Forum, Vol. 858, pp. 1015-1018, 2016

Online since:

May 2016

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[1] M. Mazzillo et al., 4H-SiC Schottky photodiode based demonstrator board for UV-Index monitoring, IEEE Sens. J. 11 (2011) 377.

[2] A. Sciuto et al., Thin metal film Ni2Si/4H-SiC vertical Schottky photodiodes, IEEE Photon. Technol. Lett. 26 (2014) 1782.

[3] F. Roccaforte, et al., Structural and electrical properties of Ni/Ti Schottky contacts on silicon carbide upon thermal annealing, J. Appl. Phys., 96, (2004) 4313.

DOI: https://doi.org/10.1063/1.1787138

[4] D. B. Williams, C. B. Carter, Transmission Electron Microscopy: A Textbook for Materials Science, Springer: New York, (2009) 180.