15 eV Protons Irradiation of the GaN Schottky Diodes


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Schottky-barrier diodes with a diameter of ~10 μm are fabricated on n-GaN epitaxial films grown by hydride vapor-phase epitaxy (HVPE) on sapphire substrates. The changes in the parameters of the diodes under irradiation with 15 MeV protons are studied. The carrier rate was found to be 130-145 cm-1. The linear nature of the dependence N = F (D) (N is carrier concentration, and D, the irradiation dose) shows that compensation of the material is associated with transition of electrons from shallow donors to deep acceptor levels which are related to primary radiation defects.



Edited by:

Fabrizio Roccaforte, Francesco La Via, Roberta Nipoti, Danilo Crippa, Filippo Giannazzo and Mario Saggio






A. A. Lebedev et al., "15 eV Protons Irradiation of the GaN Schottky Diodes", Materials Science Forum, Vol. 858, pp. 1186-1189, 2016

Online since:

May 2016




* - Corresponding Author

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