Threshold Voltage Instabilities of Present SiC-Power MOSFETs under Positive Bias Temperature Stress

Abstract:

Article Preview

We study the threshold voltage (Vth) instability of commercially available silicon carbide (SiC) power MOSFETs or prototypes from four different manufacturers under positive bias temperature stress (PBTS). A positive bias near the Vth causes a threshold voltage shift of 0.7 mV per decade in time per nanometer oxide thickness in the temperature range between-50 °C and 150 °C. Recovery at +5 V after a 100 s +25 V gate-pulse causes a recovery between-1.5 mV/dec/nm and-1.0 mV/dec/nm at room temperature and is decreasing with temperature. All devices show similar stress, recovery and temperature dependent behavior indicating that the observed Vth instabilities are likely a fundamental physical property of the SiC-SiO2 system caused by electron trapping in near interface traps. It is important to note that the trapping is not causing permanent damage to the interface like H-bond-breakage in silicon based devices and is nearly fully reversible via a negative gate bias.

Info:

Periodical:

Edited by:

Fabrizio Roccaforte, Francesco La Via, Roberta Nipoti, Danilo Crippa, Filippo Giannazzo and Mario Saggio

Pages:

481-484

DOI:

10.4028/www.scientific.net/MSF.858.481

Citation:

G. Rescher et al., "Threshold Voltage Instabilities of Present SiC-Power MOSFETs under Positive Bias Temperature Stress", Materials Science Forum, Vol. 858, pp. 481-484, 2016

Online since:

May 2016

Export:

Price:

$38.00

* - Corresponding Author

[1] A, J. Lelis, Time dependence of bias-stress-induced SiC MOSFET threshold-voltage instability measurements, Transactions on Electron Devices 55 (2008), 1835-1840.

DOI: 10.1109/ted.2008.926672

[2] T. Okayama, Bias-stress induced threshold voltage and drain current instability in 4H–SiC DMOSFETs, Solid-State Electronics 52 (2008), 164-170.

DOI: 10.1016/j.sse.2007.07.031

[3] G. Ghibaudo, New method for the extraction of MOSFET parameters, Electronics Letters 24 (1988), 543-545.

[4] H. Yano, High Channel Mobility in Inversion Layers of 4H-SiC MOSFET's by Utilizing (11-20) Face, Electron Device Letters, IEEE 22 (2001) 176-178.

[5] T. Aichinger, On the temperature dependence of NBTI recovery, Microelectronics Reliability 48 (2008) 1178-1184.

DOI: 10.1016/j.microrel.2008.06.018

In order to see related information, you need to Login.