Junction Barrier Schottky (JBS) Rectifier Interface Engineering Facilitated by Two-Dimensional (2D) Dopant Imaging

Abstract:

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The shielding cell architecture of a buried grid (BG) Junction Barrier Schottky (JBS) diode consisting of multiple consecutive p+-implanted stripes below the metal/semiconductor interface has been observed by performing non-contact Scanning Probe Microscopy (SPM) and Secondary Electron Potential Contrast (SEPC) measurements on the cross-section of the device. We have demonstrated that these techniques succeeded in mapping the two-dimensional carrier distribution inside the active area of the device, however with different resolution and quantification possibilities.

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Periodical:

Edited by:

Fabrizio Roccaforte, Francesco La Via, Roberta Nipoti, Danilo Crippa, Filippo Giannazzo and Mario Saggio

Pages:

497-500

DOI:

10.4028/www.scientific.net/MSF.858.497

Citation:

H.R. Rossmann et al., "Junction Barrier Schottky (JBS) Rectifier Interface Engineering Facilitated by Two-Dimensional (2D) Dopant Imaging", Materials Science Forum, Vol. 858, pp. 497-500, 2016

Online since:

May 2016

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$35.00

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