Junction Barrier Schottky (JBS) Rectifier Interface Engineering Facilitated by Two-Dimensional (2D) Dopant Imaging
The shielding cell architecture of a buried grid (BG) Junction Barrier Schottky (JBS) diode consisting of multiple consecutive p+-implanted stripes below the metal/semiconductor interface has been observed by performing non-contact Scanning Probe Microscopy (SPM) and Secondary Electron Potential Contrast (SEPC) measurements on the cross-section of the device. We have demonstrated that these techniques succeeded in mapping the two-dimensional carrier distribution inside the active area of the device, however with different resolution and quantification possibilities.
Fabrizio Roccaforte, Francesco La Via, Roberta Nipoti, Danilo Crippa, Filippo Giannazzo and Mario Saggio
H.R. Rossmann et al., "Junction Barrier Schottky (JBS) Rectifier Interface Engineering Facilitated by Two-Dimensional (2D) Dopant Imaging", Materials Science Forum, Vol. 858, pp. 497-500, 2016