Electrical Performance of 4H-SiC Based Drift Step Recovery Diodes
Mesa-epitaxial 4H-SiC p+-p-no-n+-diodes were fabricated from commercial epitaxial wafers. Reverse recovery characteristics of the diodes were measured in pulse regimes to be relevant to operation of drift step recovery diodes (DSRDs) . When injecting the minority carriers by forward current pulse followed by applying a reverse voltage pulse, the diodes are able to break the reverse current in a subnanosecond time (DSRD-mode). Different regimes of diode operation in DSRD-mode are investigated such as variable reverse voltage amplitude, forward current amplitude and duration, time delay between forward and reverse pulses.
Fabrizio Roccaforte, Francesco La Via, Roberta Nipoti, Danilo Crippa, Filippo Giannazzo and Mario Saggio
P. A. Ivanov et al., "Electrical Performance of 4H-SiC Based Drift Step Recovery Diodes", Materials Science Forum, Vol. 858, pp. 761-764, 2016