Electrical Performance of 4H-SiC Based Drift Step Recovery Diodes


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Mesa-epitaxial 4H-SiC p+-p-no-n+-diodes were fabricated from commercial epitaxial wafers. Reverse recovery characteristics of the diodes were measured in pulse regimes to be relevant to operation of drift step recovery diodes (DSRDs) [1]. When injecting the minority carriers by forward current pulse followed by applying a reverse voltage pulse, the diodes are able to break the reverse current in a subnanosecond time (DSRD-mode). Different regimes of diode operation in DSRD-mode are investigated such as variable reverse voltage amplitude, forward current amplitude and duration, time delay between forward and reverse pulses.



Edited by:

Fabrizio Roccaforte, Francesco La Via, Roberta Nipoti, Danilo Crippa, Filippo Giannazzo and Mario Saggio




P. A. Ivanov et al., "Electrical Performance of 4H-SiC Based Drift Step Recovery Diodes", Materials Science Forum, Vol. 858, pp. 761-764, 2016

Online since:

May 2016




* - Corresponding Author

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DOI: https://doi.org/10.4028/www.scientific.net/msf.740-742.865

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