Electrical Performance of 4H-SiC Based Drift Step Recovery Diodes

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Mesa-epitaxial 4H-SiC p+-p-no-n+-diodes were fabricated from commercial epitaxial wafers. Reverse recovery characteristics of the diodes were measured in pulse regimes to be relevant to operation of drift step recovery diodes (DSRDs) [1]. When injecting the minority carriers by forward current pulse followed by applying a reverse voltage pulse, the diodes are able to break the reverse current in a subnanosecond time (DSRD-mode). Different regimes of diode operation in DSRD-mode are investigated such as variable reverse voltage amplitude, forward current amplitude and duration, time delay between forward and reverse pulses.

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Edited by:

Fabrizio Roccaforte, Francesco La Via, Roberta Nipoti, Danilo Crippa, Filippo Giannazzo and Mario Saggio

Pages:

761-764

Citation:

P. A. Ivanov et al., "Electrical Performance of 4H-SiC Based Drift Step Recovery Diodes", Materials Science Forum, Vol. 858, pp. 761-764, 2016

Online since:

May 2016

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$38.00

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[1] I.V. Grekhov, G.A. Mesyats, Physical basis for high-power semiconductor nanosecond opening switches, IEEE Transactions on Plasma Science 28 (2000) 1540-1544.

DOI: https://doi.org/10.1109/27.901229

[2] H. Benda, E. Shpenke, Reverse recovery processes in silicon power rectifiers, Proc. IEEE 55 (1967) 1331-1354.

DOI: https://doi.org/10.1109/proc.1967.5834

[3] I.V. Grekhov, P.A. Ivanov, D.V. Khristyuk, A.O. Konstantinov, S.V. Korotkov, T.P. Samsonova, Sub-nanosecond semiconductor opening switches based on 4H–SiC p+pon+-diodes, Solid State Electron. 47 (2003) 1769- 1774.

DOI: https://doi.org/10.1016/s0038-1101(03)00157-6

[4] A.V. Afanasyev, B.V. Ivanov, V.A. Ilyin, A.F. Kardo-Sysoev, M.A. Kuznetsova, V.V. Luchinin, Superfast drift step recovery diodes (DSRDs) and vacuum field emission diodes based on 4H-SiC, Materials Science Forum 740 - 742 (2013) 1010 - 1013.

DOI: https://doi.org/10.4028/www.scientific.net/msf.740-742.1010

[5] P.A. Ivanov, I.V. Grekhov, Subnanosecond Semiconductor Opening Switch Based on 4H-SiC Junction Diode, Materials Science Forum 740 - 742 (2013) 865 - 868.

DOI: https://doi.org/10.4028/www.scientific.net/msf.740-742.865