A New Type of Single Carrier Conduction Rectifier on SiC

Abstract:

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A new rectifier, called SPND or SNPD (Schottky-PN or -NP junction diode) and inherently showing low on-resistance and unipolar operation, was experimentally demonstrated for the first time on 4H-SiC. It is structured with an n or a p region of very low doping that is sandwiched and completely depleted between a Schottky junction and a one-sided PN junction. Either electrons or holes, but not both, contribute to the current conduction process. Clear and sharp rectifying properties are observed over the entire range of applied voltage.

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Periodical:

Edited by:

Fabrizio Roccaforte, Francesco La Via, Roberta Nipoti, Danilo Crippa, Filippo Giannazzo and Mario Saggio

Pages:

769-772

DOI:

10.4028/www.scientific.net/MSF.858.769

Citation:

S. Tanimoto et al., "A New Type of Single Carrier Conduction Rectifier on SiC", Materials Science Forum, Vol. 858, pp. 769-772, 2016

Online since:

May 2016

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