Forward Current of Al+ Implanted 4H-SiC Diodes: A Study on Periphery and Area Components


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The temperature dependence of the bulk and periphery forward current components of vertical 4H-SiC p+-i-n diodes, with Al+ implanted circular anodes of diameters in the range 150-1000 mm, have been obtained from the analysis of the results of forward current-voltage measurements in the temperature range 30-290°C. The zero voltage bulk and periphery current densities at different temperatures have been used to compute the temperature dependence of: (i) the effective carrier lifetime in the space charge region, (ii) the minority carrier diffusion coefficient to lifetime ratio in the base region, and (iii) a surface quality parameter.



Edited by:

Fabrizio Roccaforte, Francesco La Via, Roberta Nipoti, Danilo Crippa, Filippo Giannazzo and Mario Saggio






M. Puzzanghera and R. Nipoti, "Forward Current of Al+ Implanted 4H-SiC Diodes: A Study on Periphery and Area Components", Materials Science Forum, Vol. 858, pp. 773-776, 2016

Online since:

May 2016




* - Corresponding Author

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