Forward Current of Al+ Implanted 4H-SiC Diodes: A Study on Periphery and Area Components

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The temperature dependence of the bulk and periphery forward current components of vertical 4H-SiC p+-i-n diodes, with Al+ implanted circular anodes of diameters in the range 150-1000 mm, have been obtained from the analysis of the results of forward current-voltage measurements in the temperature range 30-290°C. The zero voltage bulk and periphery current densities at different temperatures have been used to compute the temperature dependence of: (i) the effective carrier lifetime in the space charge region, (ii) the minority carrier diffusion coefficient to lifetime ratio in the base region, and (iii) a surface quality parameter.

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Periodical:

Edited by:

Fabrizio Roccaforte, Francesco La Via, Roberta Nipoti, Danilo Crippa, Filippo Giannazzo and Mario Saggio

Pages:

773-776

DOI:

10.4028/www.scientific.net/MSF.858.773

Citation:

M. Puzzanghera and R. Nipoti, "Forward Current of Al+ Implanted 4H-SiC Diodes: A Study on Periphery and Area Components", Materials Science Forum, Vol. 858, pp. 773-776, 2016

Online since:

May 2016

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$35.00

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[1] A. Czerwinski, et al., J. Electrochem. Soc., 145 (6), 2107-2112 (1998).

[2] T. Kimoto, et al., IEEE Trans. Electron Dev., 46 (3), 471, (1999).

[3] U. Grossner, F. Moscatelli and R. Nipoti, Mater. Sci. Forum 778-780, 657 (2014).

[4] A. Nath, et al., IEEE proceedings IIT2014 doi: 10. 1109/IIT. 2014. 6940050.

[5] R. Nipoti, et al., MRS Proceedings, 1693, mrss14-1693-dd04-01 doi: 10. 1557/opl. 2014. 600.

[6] CREE, http: /www. cree. com.

[7] R. Nipoti, et al., Electrochem. Sol. -St. Lett., 13 (12) (2010) H432-H435.

[8] R. Nipoti, et al., ECS Transactions, 50 (3), 391-397 (2012).

[9] S. M. Sze, Physics of Semiconductor Devices, John Wiley & Sons, Inc., (2007).

[10] Y. Negoro et al., Proceedings of ECSCRM (2008).

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