Silicon Carbide Schottky Rectifiers with Improved Avalanche Ruggedness

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Silicon carbide Schottky-barrier diode (SBD) rectifiers have been manufactured with low on-state voltages, high surge currents and high avalanche ruggedness. Non-destructive unclamped inductive switching currents of 188 A (mean) are achieved for the 1200 V 15 A rectifier. Very tight distribution of maximum sustained UIS current is confirmed. We relate improved avalanche ruggedness to bulk avalanche breakdown and show the breakdown pattern of the new Schottky rectifier being the same type as that for the p-n diode.

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Edited by:

Fabrizio Roccaforte, Francesco La Via, Roberta Nipoti, Danilo Crippa, Filippo Giannazzo and Mario Saggio

Pages:

777-781

Citation:

A. Konstantinov et al., "Silicon Carbide Schottky Rectifiers with Improved Avalanche Ruggedness", Materials Science Forum, Vol. 858, pp. 777-781, 2016

Online since:

May 2016

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$38.00

* - Corresponding Author

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