Characterization of 4H-SiC nMOSFETs in Harsh Environments, High-Temperature and High Gamma-Ray Radiation


Article Preview

Characteristics of 4H-SiC nMOSFETs with arsenic-doped S/D and NbNi silicide contacts in harsh environments of high-temperature up to 450°C, and high gamma-ray radiation up to over 100 Mrad, were investigated. At high temperature, field effect mobility increased as proportional to T3/2, and threshold voltage was shifted with temperature coefficients of -4.3 mV/K and -2.6 mV/K for oxide thicknesses of 10 nm and 20 nm, respectively. After Co60 gamma-ray exposure of 113 Mrad, the field effect mobility was varied within 8% for oxide thickness of 10 nm, however for 20 nm oxide thickness, this variation was 26%. The threshold voltage shifts were within 6%.



Edited by:

Fabrizio Roccaforte, Francesco La Via, Roberta Nipoti, Danilo Crippa, Filippo Giannazzo and Mario Saggio




S. Kuroki et al., "Characterization of 4H-SiC nMOSFETs in Harsh Environments, High-Temperature and High Gamma-Ray Radiation", Materials Science Forum, Vol. 858, pp. 864-867, 2016

Online since:

May 2016




* - Corresponding Author

[1] P. G. Neudeck, R. S. Okojie and L-Y. Chen, Proc. of IEEE, 90(6), (2002)1065-1075.

[2] L. Lanni, B. G. Malm, M. Östling, and C. -M. Zetterling, IEEE Electron Device Lett., 34(9), (2013) 1091-1093.

[3] T. Ohshima, H. Itoh, and M. Yoshikawa. J. Appl. Phys. , 90, (2001) 3038-3011.

[4] K. K. Lee, T. Ohshima, and H. Itoh, IEEE Trans. Nucl. Sci., 50(1), (2003) 194-200.

[5] S. Takagi, A. Toriumi, M. Iwase, and H. Tango, IEEE Trans. Electron Devices, 41(12), (1994) 2357-2362.

[6] L. Scheick, A. Johnston, P. Adell, F. Irom, and S. McClure, Proceedings of 10th Int. Workshop on Radiation Effects on Semiconductor Devices for Space Applications, (2012) 162-168.

Fetching data from Crossref.
This may take some time to load.