Physical Vapor Growth of Double Position Boundary Free, Quasi-Bulk 3C-SiC on High Quality 3C-SiC on Si CVD Templates
We have developed and investigated the quasi-bulk crystal growth of 3C-SiC on transferred, high quality, CVD-grown templates using a sublimation sandwich related technique. The seeding layers were removed from the silicon carrier using a solution of hydrogen fluoride, nitric acid and water and glued to a substrate using carbon glue. The transferred layers were used as seeding material to grow high quality, single crystalline, DPBs free 3C-SiC crystals with thicknesses of up to 860 μm and a size of 18 x 20 mm. Analysis of the 3C-SiC layers was carried out using Laue measurement in back-reflecting geometry, Raman spectroscopy and optical microscopy.
Fabrizio Roccaforte, Francesco La Via, Roberta Nipoti, Danilo Crippa, Filippo Giannazzo and Mario Saggio
P. Schuh et al., "Physical Vapor Growth of Double Position Boundary Free, Quasi-Bulk 3C-SiC on High Quality 3C-SiC on Si CVD Templates", Materials Science Forum, Vol. 858, pp. 89-92, 2016