Silicon Carbide and Related Materials 2015
This volume collects the papers from the 16th International Conference on Silicon Carbide and Related Materials (ICSCRM 2015), held in Giardini Naxos, Italy, in October 2015. During the conference, the researchers discussed issues in the field of wide bandgap semiconductors, focusing on silicon carbide, but also III-nitrides, and related materials like graphene.
The major sections of the book collect papers in the area of material growth, characterization, processing, devices and related materials and technologies.
The papers are grouped as follows:
Chapter 1: SiC Growth
Chapter 2: SiC Theory and Characterization
Chapter 3: SiC Processing
Chapter 4: SiC DevicesChapter 5: Related Materials
Bulk Growth of SiC, Characterization, Epitaxial Growth of SiC, Graphene, III-Nitrides, MOS, Power Electronics, Processing of SIC, SiC Devices, Silicon Carbide, Wide Bandgap Semiconductor