Silicon Carbide and Related Materials 2015

Volume 858

doi: 10.4028/www.scientific.net/MSF.858

Silicon Carbide and Related Materials 2015

Description:

This volume collects the papers from the 16th International Conference on Silicon Carbide and Related Materials (ICSCRM 2015), held in Giardini Naxos, Italy, in October 2015. During the conference, the researchers discussed issues in the field of wide bandgap semiconductors, focusing on silicon carbide, but also III-nitrides, and related materials like graphene.

The major sections of the book collect papers in the area of material growth, characterization, processing, devices and related materials and technologies.

The papers are grouped as follows:

Chapter 1: SiC Growth

Chapter 2: SiC Theory and Characterization

Chapter 3: SiC Processing

Chapter 4: SiC Devices

Chapter 5: Related Materials

Keywords:
Silicon Carbide, Wide Bandgap Semiconductor, Bulk Growth of SIC, Epitaxial Growth of SIC, Processing of SIC, SIC Devices, Power Electronics, MOS, Characterization, Graphene, III-Nitrides

Ringgold Subjects:

Materials Science

Info:

ISBN-13:
978-3-0357-1042-7
Editors:
Fabrizio Roccaforte, Francesco La Via, Roberta Nipoti, Danilo Crippa, Filippo Giannazzo and Mario Saggio
Pages:
1264
Year:
2016
Edition:
softcover

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