Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy
Drain current DLTS (ID-DLTS) and Hall effect measurements were carried out on two types of 4H-SiC n-MOSFETs, one with a post oxidation annealing (POA) in NO and one in O2 atmosphere. Hall effect measurements show a reduction of Dit by POA in NO compared to POA in O2 and, as a consequence, a higher inversion charge carrier density, while the Hall mobility is only weakly affected by the introduction of nitrogen during POA. Based on ID-DLTS we provide a method for a quantitative and selective investigation of near interface traps (NITs) in the oxide. It is shown that POA in NO strongly reduces the density of NITs.
Konstantinos Zekentes, Konstantin V. Vasilevskiy and Nikolaos Frangis
M. Hauck et al., "Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy", Materials Science Forum, Vol. 897, pp. 111-114, 2017