Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy


Article Preview

Drain current DLTS (ID-DLTS) and Hall effect measurements were carried out on two types of 4H-SiC n-MOSFETs, one with a post oxidation annealing (POA) in NO and one in O2 atmosphere. Hall effect measurements show a reduction of Dit by POA in NO compared to POA in O2 and, as a consequence, a higher inversion charge carrier density, while the Hall mobility is only weakly affected by the introduction of nitrogen during POA. Based on ID-DLTS we provide a method for a quantitative and selective investigation of near interface traps (NITs) in the oxide. It is shown that POA in NO strongly reduces the density of NITs.



Edited by:

Konstantinos Zekentes, Konstantin V. Vasilevskiy and Nikolaos Frangis




M. Hauck et al., "Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy", Materials Science Forum, Vol. 897, pp. 111-114, 2017

Online since:

May 2017




* - Corresponding Author

[1] V. V. Afanasev, M. Bassler, G. Pensl, M. Schulz, phys. stat. sol. (a) 162 (1997) 321.

[2] G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, M. Di Ventra, S. T. Pantelides, L. C. Feldman, R. A. Weller, Appl. Phys. Lett. 76 (2000) 1713.

[3] G. Pensl, S. Beljakowa, T. Frank, K. Gao, F. Speck, T. Seyller, L. Ley, F. Ciobanu, V. Afanas'ev, A. Stesmans, T. Kimoto, A. Schöner, phys. stat. sol. (b) 245 (2008) 1378.

DOI: https://doi.org/10.1002/pssb.200844011

[4] S. Weiss, R. Kassing, Solid-State Electronics 31 (1988) 1733.

[5] D. K. Schroder, Semiconductor Material and Device Characterization, third ed., Wiley & Sons, Hoboken, (2006).

[6] N. S. Saks, in: W. J. Choyke, H. Matsunami, G. Pensl (Eds. ), Silicon Carbide – Recent Major Advances, Springer, Berlin, 2004, pp.387-410.

[7] H. Shiomi, H. Kitai, M. Tsujimura, Y. Kiuchi, D. Nakata, S. Ono, K. Kojima, K. Fukuda, K. Sakamoto, K. Yamasaki, H. Okumura, Jpn. J. Appl. Phys. 55 (2016) 04ER19.

DOI: https://doi.org/10.7567/jjap.55.04er19

[8] I-H. Tan, G. L. Snider, L. D. Chang, E. L. Hu, J. Appl. Phys. 68 (1990) 4071.

[9] G. Pobegen, J. Weisse, M. Hauck, H. B. Weber, M. Krieger, Mater. Sci. Forum 858 (2016) 473.

Fetching data from Crossref.
This may take some time to load.