16 kV, 75 kHz, 50% Duty Cycle, SiC Photonic Based Bulk Conduction Power Switch Development


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A transconductance-like behavior similar to that of junction semiconductor devices is observed in photonically excited wide bandgap (WBG) semi-insulating material without a junction. This property offers the possibility of power electronic devices capable of virtually unlimited voltage and current carrying capability due to intrinsic electrical isolation of the controlling voltage from the switched high voltage. A proof of concept experiment demonstrated the transconductance-like property in burst mode switching to >16 kV, 50% duty cycle, and 75 kHz. Our eventual goal is to combine the light source, optics and the WBG material to form a compact module that is functionally equivalent to junction power electronic devices. In this paper, we present the background, our generalized approach for implementing photoconductive switching for potential applications to high repetition rate (>50 kHz), high voltage (>15 kV) power switching, our associated material measurements, and our path forward to multi-10s of ampere devices.



Edited by:

Konstantinos Zekentes, Konstantin V. Vasilevskiy and Nikolaos Frangis




K.C. Sampayan, "16 kV, 75 kHz, 50% Duty Cycle, SiC Photonic Based Bulk Conduction Power Switch Development", Materials Science Forum, Vol. 897, pp. 583-586, 2017

Online since:

May 2017





* - Corresponding Author

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