Investigation of Direct Water Photoelectrolysis Process Using III-N Structures

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GaN, GaN/AlGaN and GaN/InGaN-based structures were used to study water photoelectrolysis in KOH-based electrolyte, measurement of current-potential characteristics, investigation of electrode corrosion and for hydrogen generation. The corrosion process of p-n AlGaN/GaN structure starts in the p-layers, spreads via vertical channels associated with threading defects, and continues laterally along the n-layers, where large local hollows and voids were observed. The H2 production rate of 0.3-0.6 ml/cm2×h was measured for n-GaN structure.

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Edited by:

Konstantinos Zekentes, Konstantin V. Vasilevskiy and Nikolaos Frangis

Pages:

723-726

DOI:

10.4028/www.scientific.net/MSF.897.723

Citation:

A. Usikov et al., "Investigation of Direct Water Photoelectrolysis Process Using III-N Structures", Materials Science Forum, Vol. 897, pp. 723-726, 2017

Online since:

May 2017

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$38.00

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