Improving the Purity of Multicrystalline Silicon by Using Directional Solidification Method


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Large temperature gradient was introduced to improve the removal rate of metal impurity in silicon ingot during direction solidification. The concentration of metal impurities in the silicon ingot with a large temperature gradient is 0.96 ppmw. The solidification time is reduced by 20% due to the fast speed of crystal growth improved; meanwhile the purity is increased by 64%.



Edited by:

Sujan Debnath




P. T. Li et al., "Improving the Purity of Multicrystalline Silicon by Using Directional Solidification Method", Materials Science Forum, Vol. 911, pp. 51-55, 2018

Online since:

January 2018




* - Corresponding Author

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