The Preparation and Properties of Clay Bonded Silicon Carbide by Using Silicon Carbide Dusting Powder
In this paper, clay bonded silicon carbide was prepared through pressureless sintering process with silicon carbide dusting powder as raw materials and clay as sintering additive. The effects of the ball-milling method, sintering temperature and clay contents on the density, microstructure and mechanical properties of clay bonded silicon carbide refractory were studied. The planetary ball-milling was a good method to improve the density of the green body, and the density was increased simultaneously with an increase of the clay content. The liquid phase derived from low-melting eutectic mixtures of clay could prevent the superlative oxidation of silicon carbide. The mass increment of sintered samples decreased firstly and then increased at the sintering temperature range from 1250 to 1500 °C. The open porosity of samples decreased with the clay addition at a content range from 10 to 30 wt.%. The bending strength of the samples decreased firstly and then increased with the clay addition increasing. The optimum condition for preparing clay bonded silicon carbide with silicon carbide dusting powder was sintering at 1350 °C with 20 wt.% clay, and the obtained sample with a porosity of 24% achieved the bending strength of 78±7 MPa.
Junichi Hojo, Tohru Sekino, Jian Feng Yang, Hyung Sun Kim and Wen Bin Cao
S. C. Xu et al., "The Preparation and Properties of Clay Bonded Silicon Carbide by Using Silicon Carbide Dusting Powder", Materials Science Forum, Vol. 922, pp. 143-148, 2018