Hot Filament CVD Growth of 4H-SiC Epitaxial Layers

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Hot filament CVD (HFCVD) growth of undoped 4H-SiC epitaxial layers on 100 mm n-type 4o-off 4H-SiC substrates is presented as an alternate growth method for the first time. High quality crystalline material with a low density of polytype inclusions has been demonstrated and characterized with optical micrographs, SEM imaging, micro-Raman measurements, and high resolution XRD. Typical growth rates are ~3 μm/hour. Double rocking omega scans revealed diffraction peaks with a FWHM of 23 arcsec.

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Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

120-123

Citation:

B. van Zeghbroeck et al., "Hot Filament CVD Growth of 4H-SiC Epitaxial Layers", Materials Science Forum, Vol. 924, pp. 120-123, 2018

Online since:

June 2018

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$38.00

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