Silicon (001) Heteroepitaxy on 3C-SiC(001)/Si(001) Seed


Article Preview

We report for the first time the successful heteroepitaxial growth of Si(100) oriented layer on top of a 3C-SiC(001) seed. By using a post-growth modification of the 3C-SiC surface (pulse insertion of precursors during cooling), it led to a change in Si nucleation, favoring squared (100) islands instead of elongated (110) ones. Without this surface modification step, the Si layers grown on 3C-SiC were always polycrystalline with a mixture of (110) and (100) orientations. Using such Si(100) layer grown on top of 3C-SiC(100), a (100) oriented 3C-SiC single crystalline layer was successfully grown on top, fabricating thus for the first time a fully (100) oriented multilayer heterostructure made of Si(substrate)/SiC/Si/SiC.



Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis




T. Yeghoyan et al., "Silicon (001) Heteroepitaxy on 3C-SiC(001)/Si(001) Seed", Materials Science Forum, Vol. 924, pp. 128-131, 2018

Online since:

June 2018




* - Corresponding Author

[1] R. Khazaka, M. Portail, P. Vennéguès, D. Alquier, J.F. Michaud, Acta Materialia 98 (2015) 336–342.

[2] L.O. Björketun, L. Hultman, O. Kordina, J.E. Sundgren, J. Mater. Res. 13(9) (1998) 2632-2642.

[3] S. Jiao, M. Portail, J.F. Michaud, M. Zielinski, T. Chassagne, D. Alquier, Mater. Sci. Forum 711 (2012) 61-65.

[4] R. Khazaka, PhD thesis (2016) University of Tours (France).

[5] G. Ferro, E.K. Polychroniadis, D. Panknin, W. Skorupa, J. Stoemenos, Y. Monteil, Mater. Sci. Forum 527-529 (2006) 1563-1566.


[6] T. Yeghoyan, K. Alaassad, V. Souliere, G. Ferro, Mater. Sci. Forum 897 (2016) 87-90.

[7] M. Ollivier, L. Latu-Romain, M. Martin, S. David, A. Mantoux, E. Bano, V. Souliere, G. Ferro, T. Baron, J. Crystal Growth 363 (2013) 158–163.


[8] Y. Ishida, T. Takahashi, H. Okumura, K. Arai, S. Yoshida, Chem.Vap. Deposition 12 (2006) 495-501.