Silicon (001) Heteroepitaxy on 3C-SiC(001)/Si(001) Seed

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We report for the first time the successful heteroepitaxial growth of Si(100) oriented layer on top of a 3C-SiC(001) seed. By using a post-growth modification of the 3C-SiC surface (pulse insertion of precursors during cooling), it led to a change in Si nucleation, favoring squared (100) islands instead of elongated (110) ones. Without this surface modification step, the Si layers grown on 3C-SiC were always polycrystalline with a mixture of (110) and (100) orientations. Using such Si(100) layer grown on top of 3C-SiC(100), a (100) oriented 3C-SiC single crystalline layer was successfully grown on top, fabricating thus for the first time a fully (100) oriented multilayer heterostructure made of Si(substrate)/SiC/Si/SiC.

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Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

128-131

Citation:

T. Yeghoyan et al., "Silicon (001) Heteroepitaxy on 3C-SiC(001)/Si(001) Seed", Materials Science Forum, Vol. 924, pp. 128-131, 2018

Online since:

June 2018

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$38.00

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