Performance and Reliability Impacts of Extended Epitaxial Defects on 4H-SiC Power Devices


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This work explores the effects of extended epitaxial defects on 4H-SiC power devices. Advanced defect mapping techniques were used on large quantities of power device wafers, and data was aggregated to correlate device electrical characteristics to defect content. 1200 V class Junction Barrier Schottky (JBS) diodes and MOSFETs were examined in this manner; higher voltage 3.3 kV class devices were examined as well. 3C inclusions and triangular defects, as well as heavily decorated substrate scratches, were found to be device killing defects. Other defects were found to have negligible impacts on device yield, even in the case of extremely high threading dislocation content. Defect impacts on device reliability was explored on MOS-gate structures, as well as long-term device blocking tests on both MOSFETs and JBS diodes. Devices that passed on-wafer electrical parametric tests were found to operate reliably in these tests, regardless of defect content.



Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis




E. van Brunt et al., "Performance and Reliability Impacts of Extended Epitaxial Defects on 4H-SiC Power Devices", Materials Science Forum, Vol. 924, pp. 137-142, 2018

Online since:

June 2018




* - Corresponding Author

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