Extension, Closure and Conversion of In-Grown Stacking Faults in 4H-SiC Epilayers

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In-grown stacking faults (IGSFs) generated in 4H-SiC epilayers were characterized. Melted KOH etching, room-temperature cathodoluminescence, low-temperature photoluminescence and cross-section transmission electron microscopy was conducted to investigate the propagation of the IGSFs in the down-stream region of a 3C inclusion. It was found that the SFs could extend, close and convert during the epitaxial growth. The origin of these IGSFs were attributed to the interference introduced by the 3C inclusion to the step-flow growth, and the propagating behaviors of these IGSFs were discussed.

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Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

155-159

Citation:

Z. Li et al., "Extension, Closure and Conversion of In-Grown Stacking Faults in 4H-SiC Epilayers", Materials Science Forum, Vol. 924, pp. 155-159, 2018

Online since:

June 2018

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